tm september 2007 FDA33N25 n-channel mosfet ?2007 fairchild semiconductor corporation FDA33N25 rev. a www.fairchildsemi.com 1 unifet tm FDA33N25 n-channel mosfet 250v, 33a, 0.094 ? features ?r ds(on) = 0.088 ? ( typ.)@ v gs = 10v, i d = 16.5a ? low gate charge ( typ. 36nc) ? low c rss ( typ. 35pf) ? fast switching ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transis- tors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high effi- cient switching mode power supplies and active power factor correction. d g s to-3pn gs d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 250 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 33 a -continuous (t c = 100 o c) 21 i dm drain current - pulsed (note 1) 132 a e as single pulsed avalanche energy (note 2) 918 mj i ar avalanche current (note 1) 33 a e ar repetitive avalanche energy (note 1) 24.6 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 245 w - derate above 25 o c1.96w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.51 o c/w r cs thermal resistance, case to sink typ. 0.24 r ja thermal resistance, junction to ambient 40
FDA33N25 n-channel mosfet FDA33N25 rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDA33N25 FDA33N25 to-3pn - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 250 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.34 - v/ o c i dss zero gate voltage drain current v ds = 250v, v gs = 0v - - 1 a v ds = 200v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 16.5a - 0.088 0.094 ? g fs forward transconductance v ds = 20v, i d = 16.5a (note 4) - 24.2 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1655 2200 pf c oss output capacitance - 315 420 pf c rss reverse transfer capacitance - 35 55 pf q g(tot) total gate charge at 10v v ds = 200v, i d = 33a v gs = 10v (note 4, 5) -3646.8nc q gs gate to source gate charge - 10.8 - nc q gd gate to drain ?miller? charge - 16 - nc t d(on) turn-on delay time v dd = 125v, i d = 33a r g = 25 ? (note 4, 5) -3376ns t r turn-on rise time - 142 293 ns t d(off) turn-off delay time - 77 165 ns t f turn-off fall time - 68 146 ns i s maximum continuous drain to source diode forward current - - 33 a i sm maximum pulsed drain to source diode forward current - - 132 a v sd drain to source diode forward voltage v gs = 0v, i sd = 33a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 33a di f /dt = 100a/ s (note 4) - 256 - ns q rr reverse recovery charge - 2.3 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 1.35mh, i as = 33a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 33a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDA33N25 n-channel mosfet FDA33N25 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.01 0.1 1 10 0.1 1 10 100 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 46810 1 10 100 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 200 0.0 0.8 1.6 2.4 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 500 0 20406080100 0.05 0.10 0.15 0.20 0.25 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 0 1000 2000 3000 4000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 010203040 0 2 4 6 8 10 *note: i d = 33a v ds = 50v v ds = 125v v ds = 200v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDA33N25 n-channel mosfet FDA33N25 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 16.5a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 100 400 20 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse 400 dc 25 50 75 100 125 150 0 5 10 15 20 25 30 35 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.51 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDA33N25 n-channel mosfet FDA33N25 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDA33N25 n-channel mosfet FDA33N25 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
FDA33N25 n-channel mosfet FDA33N25 rev. a www.fairchildsemi.com 7 mechanical dimensions to-3pn dimensions in millimeters
FDA33N25 n-channel mosfet FDA33N25 rev. a www.fairchildsemi.com 8 trademarks the following are registered and unregistered trademarks and service ma rks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fa irchild does not assume any liability arising out of the application or use of any product or circuit d escribed herein; neither does it convey any license under its patent rights, nor the rights of others . these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not author ized for use as critical componen ts in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surg ical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? ? datasheet identification product status definition advance information formative or in design this datasheet contains the des ign specifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contains preliminar y data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specificat ions. fairchild semi conductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificatio ns on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. rev. i31
|
